NTGS5120PT1G ON Semiconductor, NTGS5120PT1G Datasheet - Page 5

• Manufacturer Part Number: NTGS5120PT1G
• Description: MOSFET P-CH 60V 1.8A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS5120PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 111 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 942pF @ 30V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.111 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.075
*For additional information on our Pb−Free strategy and soldering
1.9
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.05 (0.002)
0.037
0.037
0.95
0.95
H
SOLDERING FOOTPRINT*
E
e
A1
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
6
1
D
5
2
0.094
2.4
3
4
b
0.039
1.0
A
E
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
SCALE 10:1
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
0.028
http://onsemi.com
L
0.7
CASE 318G−02
ISSUE S
TSOP−6
inches
mm
c
5
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. DIMENSIONS A AND B DO NOT INCLUDE
STYLE 1:
DIM
PIN 1. DRAIN
H
A1
ANSI Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
b
D
E
L
q
c
e
E
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
1.00
0.06
0.38
0.18
3.00
1.50
0.95
0.40
2.75
−
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MAX
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
10°
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
MIN
0°
NTGS5120P/D
INCHES
0.039
0.002
0.014
0.007
0.059
0.037
0.016
0.108
NOM
0.118
−
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
MAX
10°