NTGS5120PT1G ON Semiconductor, NTGS5120PT1G Datasheet - Page 4

• Manufacturer Part Number: NTGS5120PT1G
• Description: MOSFET P-CH 60V 1.8A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS5120PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 111 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 942pF @ 30V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.111 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1300
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100
100
1.0
10
0
1.0
0
C
C
Figure 9. Resistive Switching Time Variation
rss
V
I
V
oss
D
DD
GS
= −1.0 A
−V
= −30 V
= −10 V
DS
Figure 7. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (V)
10
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
C
20
10
iss
t
t
d(off)
d(on)
TYPICAL CHARACTERISTICS
V
T
t
t
30
f
r
GS
J
= 25°C
= 0 V
http://onsemi.com
100
40
4
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0
0
0
0
Figure 10. Diode Forward Voltage vs. Current
Q
Figure 8. Gate−to−Source Voltage vs. Total
gs
V
T
2.0
0.1
GS
J
−V
= 25°C
= 0 V
SD
4.0
0.2
Q
Q
, SOURCE−TO−DRAIN VOLTAGE (V)
gd
G
, TOTAL GATE CHARGE (nC)
6.0
0.3
8.0
Qt
0.4
Charge
10
0.5
12
0.6
T
I
Vds = −30 V
D
J
14
= −2.9 A
= 25°C
0.7
16
0.8
18
0.9