NTF5P03T3G ON Semiconductor, NTF5P03T3G Datasheet - Page 2

• Manufacturer Part Number: NTF5P03T3G
• Description: MOSFET P-CH 30V 3.7A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF5P03T3G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 5.2 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF5P03T3GOS; NTF5P03T3GOS; NTF5P03T3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Repetitive rating; pulse width limited by maximum junction temperature.
MAXIMUM RATINGS
Negative sign for P−Channel devices omitted for clarity
1 sq in
FR−4 or G−10 PCB
10 seconds
Minimum
FR−4 or G−10 PCB
10 seconds
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage − Continuous
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
(V
DD
= −30 Vdc, V
GS
(T
= −10 Vdc, Peak I
GS
J
Thermal Resistance − Junction to Ambient
Total Power Dissipation @ T
Linear Derating Factor
Drain Current − Continuous @ T
Continuous @ T
Pulsed Drain Current (Note 1)
Thermal Resistance − Junction to Ambient
= 25°C unless otherwise noted)
= 1.0 MW)
Total Power Dissipation @ T
Linear Derating Factor
Drain Current − Continuous @ T
Continuous @ T
Pulsed Drain Current (Note 1)
Rating
L
A
= −12 Apk, L = 3.5 mH, R
= 70°C
A
= 70°C
A
= 25°C
http://onsemi.com
A
A
NTF5P03T3
= 25°C
= 25°C
J
A
= 25°C
= 25°C
2
G
= 25 W)
Symbol
T
R
R
V
V
J
V
E
I
I
THJA
P
THJA
P
DGR
, T
DSS
DM
DM
I
I
I
I
GS
D
D
D
D
AS
D
D
stg
− 55 to 150
Max
± 20
3.13
−5.2
−4.1
1.56
12.5
−3.7
−2.9
−30
−30
−26
−19
250
40
25
80
mW/°C
mW/°C
Watts
Watts
°C/W
°C/W
Unit
mJ
°C
V
V
V
A
A
A
A
A
A