NTF5P03T3G ON Semiconductor, NTF5P03T3G Datasheet - Page 3

• Manufacturer Part Number: NTF5P03T3G
• Description: MOSFET P-CH 30V 3.7A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF5P03T3G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 5.2 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF5P03T3GOS; NTF5P03T3GOS; NTF5P03T3GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. Switching characteristics are independent of operating junction temperatures.
4. Reflects typical values.
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 2 and 4)
Forward Transconductance (Note 2)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
DS
GS
GS
DS
= −24 Vdc, V
= −24 Vdc, V
= V
= −15 Vdc, I
= 0 Vdc, I
= ± 20 Vdc, V
= −10 Vdc, I
= −4.5 Vdc, I
GS
, I
D
D
= −0.25 mAdc)
= −0.25 mAdc)
D
D
D
GS
GS
DS
= −2.0 Adc)
= −5.2 Adc)
= −2.6Adc)
= 0 Vdc)
= 0 Vdc, T
Cpk +
= 0 Vdc)
(Note 2)
Characteristic
Max limit * Typ
J
3
= 125°C)
SIGMA
(T
(V
(V
(V
(I
(I
(I
(V
A
DD
DD
DS
dI
S
S
S
V
= 25°C unless otherwise noted)
DS
S
= −4.0 Adc, V
= −4.0 Adc, V
= −4.0 Adc, V
GS
R
R
T
= −15 Vdc, I
= −15 Vdc, I
= −24 Vdc, I
/dt = 100 A/ms) (Note 2)
J
G
G
= −25 Vdc, V
V
V
= −10 Vdc) (Note 2)
= 125°C) (Note 2)
= 6.0 W) (Note 2)
= 6.0 W) (Note 2)
GS
GS
f = 1.0 MHz)
= −10 Vdc,
= −10 Vdc,
http://onsemi.com
D
D
D
GS
GS
GS
NTF5P03T3
= −4.0 Adc,
= −2.0 Adc,
= −4.0 Adc,
GS
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
= 0 V,
3
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
d(on)
d(off)
d(on)
d(off)
DSS
GSS
g
Q
Q
Q
Q3
t
t
t
oss
t
t
t
t
SD
iss
rss
RR
rr
a
b
fs
r
r
f
f
T
1
2
−1.0
Min
−30
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−1.75
−0.89
0.036
−1.1
Typ
−28
107
500
153
3.5
3.9
1.6
3.5
2.6
76
58
10
33
38
20
16
45
23
24
15
34
20
14
−
−
−
−
± 100
Max
−1.0
−3.0
−1.5
−25
100
150
950
440
140
110
24
48
94
92
38
60
80
38
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
mW
nC
mC
pF
ns
ns
ns