NTF5P03T3G ON Semiconductor, NTF5P03T3G Datasheet - Page 5

• Manufacturer Part Number: NTF5P03T3G
• Description: MOSFET P-CH 30V 3.7A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF5P03T3G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 5.2 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF5P03T3GOS; NTF5P03T3GOS; NTF5P03T3GOSTR

6000
5000
4000
3000
2000
1000
1000
0.01
100
100
0.1
10
10
0
1
0.1
1
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
V
SINGLE PULSE
T
V
I
V
C
C
Figure 9. Resistive Switching Time Variation
D
V
GS
C
Figure 11. Maximum Rated Forward Biased
DD
GS
iss
rss
DS
−V
= −4.0 A
= 25°C
−V
= 20 V
= −15 V
= −10 V
DS
= 0 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
THERMAL LIMIT
PACKAGE LIMIT
0
dc
R
R
versus Gate Resistance
10 ms
DS(on)
−V
G
Safe Operating Area
, GATE RESISTANCE (W)
1
V
DS
1 ms
GS
LIMIT
= 0 V
(VOLTS)
100 ms
10
10
TYPICAL ELECTRICAL CHARACTERISTICS
C
C
C
10 ms
iss
rss
oss
t
d(off)
10
20
t
d(on)
t
t
f
r
T
J
= 25°C
http://onsemi.com
NTF5P03T3
100
100
30
5
12.5
350
300
250
200
150
100
7.5
5.0
2.5
10
50
0
3
2
1
0
0
0.5
0
25
Figure 10. Diode Forward Voltage versus Current
−V
Figure 12. Maximum Avalanche Energy versus
Q
Drain−to−Source Voltage versus Total Charge
V
T
DS
1
GS
J
−V
T
= 25°C
J
SD
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
10
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.6
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
Q
Q
g
2
, TOTAL GATE CHARGE (nC)
20
0.7
Q
75
T
30
100
0.8
40
I
T
D
−V
J
= −2 A
= 25°C
GS
50
125
0.9
I
D
= −6 A
60
25
20
15
10
5
0
150
1.0