NTD2955PT4G ON Semiconductor, NTD2955PT4G Datasheet - Page 2

• Manufacturer Part Number: NTD2955PT4G
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD2955PT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 and 4)
DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3)
Drain-to-Source Breakdown Voltage (Note 3)
Zero Gate Voltage Drain Current
Gate-Body Leakage Current (V
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Drain-to-Source On-Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(V
(I
(I
(I
S
S
S
GS
GS
GS
DS
GS
GS
GS
= 12 Adc, V
= 12 Adc, V
= 12 A, dI
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= V
= -10 Vdc, I
= -10 Vdc, I
= -10 Vdc, I
GS
, I
S
D
/dt = 100 A/ms ,V
GS
GS
D
= -250 mAdc)
DS
DS
= -0.25 mA)
D
D
D
= 0 V)
= 0 V, T
= -60 Vdc, T
= -60 Vdc, T
= -6.0 Adc)
= -12 Adc)
= -6.0 Adc, T
J
= 150°C)
Characteristic
DS
GS
GS
= 10 Vdc, I
J
J
= ± 20 Vdc, V
J
= 25°C)
= 150°C)
= 0 V)
= 150°C)
(V
(V
(T
DS
(V
DS
V
J
DD
D
GS
= 25°C unless otherwise noted)
= -48 Vdc, V
= -25 Vdc, V
= 6.0 Adc)
= -30 Vdc, I
= -10 V, R
DS
F = 1.0 MHz)
I
D
= 0 Vdc)
NTD2955, NTD2955P
= -12 A)
http://onsemi.com
GS
G
GS
D
= 9.1 W)
= -10 Vdc,
= -12 A,
= 0 Vdc,
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
Q
Q
DS(on)
DS(on)
C
V
GS(th)
C
gFS
d(on)
d(off)
DSS
GSS
Q
t
t
t
oss
t
t
SD
rss
GS
GD
RR
iss
rr
a
b
r
f
T
-2.0
Min
-60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.155
-1.86
-2.8
-1.6
-1.3
0.10
Typ
500
150
4.5
8.0
4.0
7.0
67
50
10
45
26
48
15
50
40
10
-
-
-
-
-
0.180
-100
-100
Max
-4.0
-2.6
-2.0
-2.5
-10
750
250
100
20
85
40
90
30
-
-
-
-
-
-
-
-
-
-
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
W