NTD2955PT4G ON Semiconductor, NTD2955PT4G Datasheet - Page 5

• Manufacturer Part Number: NTD2955PT4G
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD2955PT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
1.0
0.1
1.0E-05
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
0.01
0.02
1.0E-04
1.0E-03
Figure 13. Thermal Response
NTD2955, NTD2955P
http://onsemi.com
t, TIME (s)
5
1.0E-02
P
(pk)
DUTY CYCLE, D = t
t
1
t
2
1.0E-01
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
- T
1.0E+00
C
= P
qJC
(pk)
1
R
qJC
(t)
1.0E+01