NTD2955PT4G ON Semiconductor, NTD2955PT4G Datasheet - Page 7

• Manufacturer Part Number: NTD2955PT4G
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD2955PT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.155 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
S
F
1
B
R
G
4
2
3
L
A
K
D
2 PL
0.13 (0.005)
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
J
0.228
5.80
M
C
T
-T-
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
NTD2955, NTD2955P
E
SEATING
PLANE
0.244
0.101
6.20
U
2.58
http://onsemi.com
CASE 369C-01
ISSUE O
DPAK
7
0.118
3.0
0.063
1.6
SCALE 3:1
Z
6.172
0.243
inches
mm
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
U
V
F
J
L
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.215
0.040
0.050
0.114
MAX
---
---
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
---
---