2SK3919-ZK-E2-AY Renesas Electronics America, 2SK3919-ZK-E2-AY Datasheet - Page 3

• Manufacturer Part Number: 2SK3919-ZK-E2-AY
• Description: MOSFET N-CH 25V MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3919-ZK-E2-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. D17078EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
• Low on-state resistance
• Low C
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (T
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SK3919 is N-channel MOS FET device that
R
DS(on)1
2. Starting T
iss
= 5.6 mΩ MAX. (V
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 2050 pF TYP.
µ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
GS
GS
= 25°C)
= 0 V)
= 0 V)
= 10 V, I
DD
N-CHANNEL POWER MOS FET
= 12.5 V, R
D
The mark
= 32 A)
A
I
= 25°C)
I
D(pulse)
V
V
G
DATA SHEET
D(DC)
P
P
T
E
T
I
GSS
DSS
AS
= 25 Ω, V
stg
AS
T1
T2
ch
SWITCHING
shows major revised points.
−55 to +150
MOS FIELD EFFECT TRANSISTOR
GS
±256
±20
±64
150
1.0
25
36
27
73
= 20 → 0 V
ORDERING INFORMATION
mJ
°C
°C
W
W
PART NUMBER
V
V
A
A
A
2SK3919-ZK
2SK3919
(TO-251)
(TO-252)
2SK3919
TO-252 (MP-3ZK)
TO-251 (MP-3)
PACKAGE
2004