2SK4091-ZK-E1-AY Renesas Electronics America, 2SK4091-ZK-E1-AY Datasheet - Page 3

• Manufacturer Part Number: 2SK4091-ZK-E1-AY
• Description: MOSFET 30V N-CH MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK4091-ZK-E1-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. D18635EJ1V0DS00 (1st edition)
Date Published February 2007 NS CP(K)
Printed in Japan
• Low on-state resistance
• Low gate to drain charge
• 4.5 V drive available
• Avalanche capability ratings
Note Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
DESCRIPTION
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
ORDERING INFORMATION
2SK4091(1)-S27-AY
2SK4091-ZK-E1-AY
2SK4091-ZK-E2-AY
R
R
Q
The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
DS(on)1
DS(on)2
GD
= 2.2 nC TYP. (V
PART NUMBER
2. Starting T
= 13.0 mΩ MAX. (V
= 21 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
Note
μ
Note
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
DD
= 25°C)
Note2
Note2
= 15 V, I
DS
C
A
GS
GS
= 25°C)
= 25°C)
GS
= 0 V)
= 0 V)
= 4.5 V, I
LEAD PLATING
Pure Sn (Tin)
= 10 V, I
DD
N-CHANNEL POWER MOS FET
D
= 15 V, R
= 30 A)
D
D
= 15 A)
= 15 A)
A
P
V
V
I
I
P
T
T
I
E
= 25°C)
D(DC)
D(pulse)
AS
G
DSS
GSS
T1
T2
ch
stg
AS
= 25 Ω, V
DATA SHEET
SWITCHING
Tape 2500 p/reel
Tube 75 p/tube
PACKING
GS
−55 to +150
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 0.1 mH
±110
32.4
±20
±30
150
1.0
30
21
18
mJ
°C
°C
W
W
V
V
A
A
A
TO-252 (MP-3ZK) typ. 0.27 g
TO-251 (MP-3-b) typ. 0.34 g
PACKAGE
2SK4091
(TO-251)
(TO-252)
2007