2SK4091-ZK-E1-AY Renesas Electronics America, 2SK4091-ZK-E1-AY Datasheet - Page 7

• Manufacturer Part Number: 2SK4091-ZK-E1-AY
• Description: MOSFET 30V N-CH MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK4091-ZK-E1-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.01
100
100
30
25
20
15
10
0.1
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
0
1
1
-75
0.1
0
V
V
R
t
DD
GS
G
r
= 3 Ω
V
SWITCHING CHARACTERISTICS
V
T
= 15 V
= 10 V
GS
F(S-D)
-25
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
= 4.5 V
- Channel Temperature - ° C
t
f
10 V
– Source to Drain Voltage - V
I
D
0.5
1
- Drain Current - A
V
25
GS
= 4.5 V
10 V
t
t
d(off)
d(on)
0 V
75
10
1
125
I
Pulsed
D
= 15 A
Pulsed
Data Sheet D18635EJ1V0DS
175
100
1.5
10000
1000
100
100
10
30
20
10
10
1
0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0.1
0
1
V
di/dt = 100 A/ μ s
V
f = 1 MHz
GS
GS
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
= 0 V
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
I
F
V
– Diode Forward Current - A
- Drain to Source Voltage – V
Q
DD
G
V
= 24 V
1
– Gate Charge - nC
DS
15 V
6 V
10
10
V
GS
C
C
C
10
oss
iss
rss
I
D
2SK4091
= 30 A
100
100
20
5
12
10
8
6
4
2
0