2SK4091-ZK-E1-AY Renesas Electronics America, 2SK4091-ZK-E1-AY Datasheet - Page 4

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2SK4091-ZK-E1-AY

Manufacturer Part Number
2SK4091-ZK-E1-AY
Description
MOSFET 30V N-CH MP-3ZK/TO-252
Manufacturer
Renesas Electronics America
Datasheet

Specifications of 2SK4091-ZK-E1-AY

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
GS
PG.
= 20 → 0 V
CHARACTERISTICS
I
PG.
G
V
50 Ω
= 2 mA
DD
I
R
D
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
Note
DSS
Starting T
V
R
V
Note
DS
L
DD
L
V
ch
DD
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
Q
R
V
t
Q
SYMBOL
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
F(S-D)
DS(on)1
DS(on)2
iss
oss
rss
G1
G2
GS
GD
G
rr
fs
A
|
Data Sheet D18635EJ1V0DS
= 25°C)
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
V
I
I
di/dt = 100 A/
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
DD
DD
G
= 30 A, V
= 30 A, V
V
0
= 3 Ω
= 30 V, V
= V
= 10 V, I
= 10 V,
GS
= ±20 V, V
= 10 V, I
= 4.5 V, I
= 0 V,
= 15 V, I
= 10 V,
= 15 V, V
= 15 V, V
= 15 V, I
τ = 1 s
Duty Cycle ≤ 1%
PG.
TEST CIRCUIT 2 SWITCHING TIME
GS
μ
, I
TEST CONDITIONS
τ
D
GS
GS
D
D
D
D
= 250
D
μ
GS
GS
GS
= 0 V
= 0 V,
= 15 A
= 15 A
= 30 A,
= 30 A
s
DS
= 15 A
R
= 0 V
= 10 V, I
= 4.5 V, I
= 0 V
G
D.U.T.
μ
A
D
D
= 30 A
= 30 A
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
1.5
7
V
V
V
GS
DS
0
DS
0
TYP.
13.6
920
240
10%
2.0
9.8
7.5
3.9
4.8
6.7
2.6
2.2
1.6
0.9
t
14
78
26
15
25
16
d(on)
90%
t
on
MAX.
±100
10% 10%
t
13.0
2.5
1.5
r
10
21
V
2SK4091
GS
t
d(off)
UNIT
μ
nA
pF
pF
pF
nC
nC
nC
nC
nC
t
ns
ns
ns
ns
ns
V
S
Ω
V
off
90%
A
90%
t
f

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