NDF05N50ZG ON Semiconductor, NDF05N50ZG Datasheet

MOSFET N-CH 500V TO-220FP

NDF05N50ZG

Manufacturer Part Number
NDF05N50ZG
Description
MOSFET N-CH 500V TO-220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF05N50ZG

Package / Case
TO-220-3 Full Pack (Straight Leads)
Mounting Type
Through Hole
Power - Max
28W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
18.5nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
5A
Drain To Source Voltage (vdss)
500V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.25 Ohms
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
5 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
18.5 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF05N50ZG
Manufacturer:
ON
Quantity:
5 950
NDF05N50Z, NDP05N50Z,
NDD05N50Z
N-Channel Power MOSFET
500 V, 1.25 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 1
Drain−to−Source Voltage
Continuous Drain Current R
Continuous Drain Current
R
Pulsed Drain Current, V
10 V
Power Dissipation R
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%, T
25°C) (Figure 17)
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
Operating Junction and
Storage Temperature Range
D
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
qJC
= 5.0 A
S
= 4.4 A, di/dt ≤ 100 A/ms, V
, T
A
= 100°C
Rating
qJC
A
GS
=
@
qJC
DD
Symbol
≤ BV
T
V
T
dv/dt
V
V
J
V
E
I
P
T
PKG
, T
DSS
DM
I
I
I
esd
ISO
GS
D
D
AS
S
D
(T
L
DSS
stg
C
= 25°C unless otherwise noted)
, T
(Note 1)
(Note 1)
(Note 1)
J
4500
NDF
= +150°C
3.2
20
28
5
4.5 (Note 2)
−55 to 150
3000
500
±30
130
300
260
NDP
5
3.2
20
96
5
NDD
4.7
19
83
3
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
CASE 221D
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
TO−220FP
MARKING AND ORDERING INFORMATION
1
STYLE 1
2
3
500 V
V
DSS
G (1)
CASE 221A
1
TO−220AB
STYLE 5
http://onsemi.com
2
3
N−Channel
CASE 369D
Publication Order Number:
D (2)
R
STYLE 2
DS(on)
1
IPAK
2
3
S (3)
1.25 W
(TYP) @ 2.2 A
NDF05N50Z/D
4
CASE 369AA
1 2
STYLE 2
DPAK
3
4

Related parts for NDF05N50ZG

NDF05N50ZG Summary of contents

Page 1

NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T Rating Symbol Drain−to−Source Voltage ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State 3. Insertion mounted 4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 oz] including traces). ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ...

Page 3

8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 2.50 2.25 2.00 1.75 1.50 1.25 1.00 ...

Page 4

T = 150°C J 1.0 0 100 150 200 250 300 350 400 450 500 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current versus Voltage 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 ...

Page 5

SINGLE PULSE T = 25° 0.1 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 12. Maximum ...

Page 6

... Additional tests on slotted 4−40 screws indicate that the screw slot fails between package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not . recommend exceeding 10 in lbs of mounting torque under any mounting conditions ...

Page 7

... ORDERING INFORMATION Order Number NDF05N50ZG NDP05N50ZG NDD05N50Z−1G NDD05N50ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NDF05N50ZG or NDP05N50ZG AYWW Gate Drain Package TO−220FP (Pb−Free) TO−220AB (Pb−Free) IPAK (Pb− ...

Page 8

PACKAGE DIMENSIONS −B− −Y− 0.25 (0.010 ...

Page 9

... 0.13 (0.005) M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/ −T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS DPAK CASE 369AA−01 ISSUE A −T− SEATING PLANE SOLDERING FOOTPRINT ...

Page 10

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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