NDF05N50ZG ON Semiconductor, NDF05N50ZG Datasheet - Page 7

• Manufacturer Part Number: NDF05N50ZG
• Description: MOSFET N-CH 500V TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF05N50ZG

• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 28W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18.5nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 5A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.25 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 5 A
• Power Dissipation: 28 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 18.5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NDF05N50ZG
NDP05N50ZG
NDD05N50Z−1G
NDD05N50ZT4G
Order Number
Gate
NDP05N50ZG
NDF05N50ZG
AYWW
Drain
or
Source
MARKING DIAGRAMS
A
Y
WW
G
http://onsemi.com
TO−220FP
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
DPAK
Gate
IPAK
= Location Code
= Year
= Work Week
= Pb−Free Package
1
Drain
Drain
7
4
2
3
Source
Gate
1
Drain
Drain 3
4
2
Source
2500 / Tape & Reel
(In Development)
50 Units / Rail
50 Units / Rail
75 Units / Rail
Shipping
†