NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 2

• Manufacturer Part Number: NTR1P02LT1G
• Description: MOSFET P-CH 20V 1.3A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02LT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4V
• Input Capacitance (ciss) @ Vds: 225pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.3mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.22Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 1.3A
• Power Dissipation: 400mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02LT1GOSTR

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Continuous Current
Pulsed Current
Forward Voltage (Note 2) (V
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
= 0 V, I
= −16 V, V
= −16 V, V
= V
= −4.5 V, I
= −2.5 V, I
GS
, I
D
D
= −10 mA)
= −250 mA)
GS
GS
D
D
= −0.75 A)
= −0.5 A)
= 0 V)
= 0 V, T
GS
Characteristic
J
= 0 V, I
GS
= 125°C)
= ± 12 V, V
S
= −0.6 A)
(V
(T
(V
R
(I
A
DD
DS
S
L
= 25°C unless otherwise noted)
dI
= 5.0 W, R
= −1.0 A, V
DS
= −5.0 V, I
= −16 V, I
(V
(V
(V
S
V
/dt = 100 A/ms)
GS
= 0 V)
DS
DS
DG
= −4.0 V)
= −5.0 V)
= −5.0 V)
= −5.0 V)
G
D
D
http://onsemi.com
GS
= 6.0 W)
= −1.5 A,
= −1.0 A,
= 0 V,
2
V
Symbol
V
r
(BR)DSS
DS(on)
t
t
I
C
I
Q
GS(th)
C
C
V
d(on)
d(off)
DSS
GSS
I
Q
SM
I
t
t
t
oss
t
t
rss
SD
RR
iss
S
rr
a
b
r
f
T
−0.7
Min
−20
0.0085
0.135
0.190
5500
−1.0
Typ
225
130
7.0
5.5
55
15
18
20
16
11
−1.25
−0.75
±100
Max
−1.0
0.22
0.35
−0.6
−1.0
−10
Unit
nA
pC
mC
mA
pF
ns
ns
W
V
V
A
V