NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 2
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NTR1P02LT1G
Manufacturer Part Number
NTR1P02LT1G
Description
MOSFET P-CH 20V 1.3A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR1P02LT3G.pdf
(5 pages)
Specifications of NTR1P02LT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 750mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4V
Input Capacitance (ciss) @ Vds
225pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P Channel
Continuous Drain Current Id
1.3mA
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
220mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.22Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Drain Current (max)
1.3A
Power Dissipation
400mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Resistance Drain-source Rds (on)
0.22 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR1P02LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
2 503
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Continuous Current
Pulsed Current
Forward Voltage (Note 2) (V
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
= 0 V, I
= −16 V, V
= −16 V, V
= V
= −4.5 V, I
= −2.5 V, I
GS
, I
D
D
= −10 mA)
= −250 mA)
GS
GS
D
D
= −0.75 A)
= −0.5 A)
= 0 V)
= 0 V, T
GS
Characteristic
J
= 0 V, I
GS
= 125°C)
= ± 12 V, V
S
= −0.6 A)
(V
(T
(V
R
(I
A
DD
DS
S
L
= 25°C unless otherwise noted)
dI
= 5.0 W, R
= −1.0 A, V
DS
= −5.0 V, I
= −16 V, I
(V
(V
(V
S
V
/dt = 100 A/ms)
GS
= 0 V)
DS
DS
DG
= −4.0 V)
= −5.0 V)
= −5.0 V)
= −5.0 V)
G
D
D
http://onsemi.com
GS
= 6.0 W)
= −1.5 A,
= −1.0 A,
= 0 V,
2
V
Symbol
V
r
(BR)DSS
DS(on)
t
t
I
C
I
Q
GS(th)
C
C
V
d(on)
d(off)
DSS
GSS
I
Q
SM
I
t
t
t
oss
t
t
rss
SD
RR
iss
S
rr
a
b
r
f
T
−0.7
Min
−20
0.0085
0.135
0.190
5500
−1.0
Typ
225
130
7.0
5.5
55
15
18
20
16
11
−1.25
−0.75
±100
Max
−1.0
0.22
0.35
−0.6
−1.0
−10
Unit
nA
pC
mC
mA
pF
ns
ns
W
V
V
A
V