NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 4
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NTR1P02LT1G
Manufacturer Part Number
NTR1P02LT1G
Description
MOSFET P-CH 20V 1.3A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR1P02LT3G.pdf
(5 pages)
Specifications of NTR1P02LT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 750mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4V
Input Capacitance (ciss) @ Vds
225pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P Channel
Continuous Drain Current Id
1.3mA
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
220mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.22Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Drain Current (max)
1.3A
Power Dissipation
400mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Resistance Drain-source Rds (on)
0.22 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR1P02LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
2 503
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4500
4000
3500
3000
2500
2000
1500
1000
100
5000
10
500
1
0
1
15
V
I
D
Figure 9. Resistive Switching Time Variation
DD
V
= −1 A
t
d(off)
DS
= −16 V
t
d(on)
10
t
= 0V
f
−V
Figure 7. Capacitance Variation
GS
versus Gate Resistance
5
R
G
, GATE RESISTANCE (W)
0
10
5
−V
t
r
DS
10
C
C
C
oss
iss
rss
15
V
T
J
GS
= 25°C
http://onsemi.com
= 0V
20
100
25
4
4
2
0
6
0.8
0.6
0.4
0.2
1.00E−01
0
0
Drain−to−Source Voltage versus Total Charge
Q
V
T
Figure 10. Diode Forward Voltage versus
J
1
GS
−V
= 25°C
= 0 V
SD
3.00E−01
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Q
G
, TOTAL GATE CHARGE (nC)
Q
2
5.00E−01
Current
Q
T
2
7.00E−01
V
I
T
D
3
J
DS
= −1.5 A
= 25°C
= −16 V
9.00E−01
4
16
12
28
24
20
8
4
0