NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 3
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NTR1P02LT1G
Manufacturer Part Number
NTR1P02LT1G
Description
MOSFET P-CH 20V 1.3A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR1P02LT3G.pdf
(5 pages)
Specifications of NTR1P02LT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
220 mOhm @ 750mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
1.25V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 4V
Input Capacitance (ciss) @ Vds
225pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P Channel
Continuous Drain Current Id
1.3mA
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
220mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.22Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Drain Current (max)
1.3A
Power Dissipation
400mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Resistance Drain-source Rds (on)
0.22 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR1P02LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
2 503
Company:
Part Number:
NTR1P02LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.04
0.03
0.02
0.01
2.5
1.5
0.5
0.3
0.2
0.1
2
1
0
0
0
−50
0
0
I
T
−V
D
I
V
D
J
GS
= −10 A
−25
= 25°C
−V
Figure 5. On−Resistance Variation with
DS
= −0.5 A
Figure 1. On−Region Characteristics
= −2.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
V
Figure 3. On−Resistance versus
T
−2.4 V
1
−2.6 V
−2.2 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
2
J
, JUNCTION TEMPERATURE (°C)
0
= −3 V
Gate−to−Source Voltage
−2.8 V
25
Temperature
2
4
−1.2 V
50
3
6
−2 V
75
100
T
4
−1.8 V
−1.6 V
−1.4 V
8
J
= 25°C
125
http://onsemi.com
150
5
10
3
1000
0.25
0.15
0.05
0.01
100
1.4
1.2
0.8
0.6
0.4
0.2
0.3
0.2
0.1
0.1
10
1
0
0
1
0.2
1
4
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
T
V
J
GS
−V
V
−V
J
GS
= 100°C
DS
0.3
1.2
= 25°C
DS
= 0 V
GS
T
= −2.5 V
≥ −10 V
Figure 2. Transfer Characteristics
J
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
−I
0.4
1.4
D
, DRAIN CURRENT (AMPS)
8
and Gate Voltage
versus Voltage
T
0.5
J
1.6
T
T
= −55°C
J
J
T
= 125°C
= 100°C
J
0.6
= 25°C
1.8
12
0.7
2
0.8
T
T
T
J
J
J
2.2
= 100°C
= −55°C
= 25°C
16
0.9
2.4
1