NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 3

• Manufacturer Part Number: NTR1P02LT1G
• Description: MOSFET P-CH 20V 1.3A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02LT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4V
• Input Capacitance (ciss) @ Vds: 225pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.3mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.22Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 1.3A
• Power Dissipation: 400mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02LT1GOSTR

0.04
0.03
0.02
0.01
2.5
1.5
0.5
0.3
0.2
0.1
2
1
0
0
0
−50
0
0
I
T
−V
D
I
V
D
J
GS
= −10 A
−25
= 25°C
−V
Figure 5. On−Resistance Variation with
DS
= −0.5 A
Figure 1. On−Region Characteristics
= −2.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
V
Figure 3. On−Resistance versus
T
−2.4 V
1
−2.6 V
−2.2 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
2
J
, JUNCTION TEMPERATURE (°C)
0
= −3 V
Gate−to−Source Voltage
−2.8 V
25
Temperature
2
4
−1.2 V
50
3
6
−2 V
75
100
T
4
−1.8 V
−1.6 V
−1.4 V
8
J
= 25°C
125
http://onsemi.com
150
5
10
3
1000
0.25
0.15
0.05
0.01
100
1.4
1.2
0.8
0.6
0.4
0.2
0.3
0.2
0.1
0.1
10
1
0
0
1
0.2
1
4
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
T
V
J
GS
−V
V
−V
J
GS
= 100°C
DS
0.3
1.2
= 25°C
DS
= 0 V
GS
T
= −2.5 V
≥ −10 V
Figure 2. Transfer Characteristics
J
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
−I
0.4
1.4
D
, DRAIN CURRENT (AMPS)
8
and Gate Voltage
versus Voltage
T
0.5
J
1.6
T
T
= −55°C
J
J
T
= 125°C
= 100°C
J
0.6
= 25°C
1.8
12
0.7
2
0.8
T
T
T
J
J
J
2.2
= 100°C
= −55°C
= 25°C
16
0.9
2.4
1