IRF9410 International Rectifier, IRF9410 Datasheet - Page 3

MOSFET N-CH 30V 7A 8-SOIC

IRF9410

Manufacturer Part Number
IRF9410
Description
MOSFET N-CH 30V 7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9410

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Continuous Drain (id) @ 25° C
-
Other names
*IRF9410

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1 0 0
1 0 0
1 0
1 0
Fig 1. Typical Output Characteristics
1
1
Fig 3. Typical Transfer Characteristics
3 . 0
0 . 1
TOP
BOTT OM 3.0V
V
V
G S
3 . 5
D S
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
, Ga te-to-S o urce V oltage (V )
, D rain-to-S ource V oltage (V )
4 . 0
T = 2 5 °C
J
3.0 V
1
V
2 0 µ s PU L SE W ID TH
T = 1 5 0 °C
20 µs P U LSE W IDTH
T = 25 °C
4 . 5
D S
J
J
= 1 0 V
5 . 0
5 . 5
1 0
A
A
1 0 0
1 0
1 0 0
0 . 1
1
1 0
0 . 1
1
Fig 2. Typical Output Characteristics
0 . 4
Fig 4. Typical Source-Drain Diode
TOP
BOTT OM 3.0V
T = 1 50 °C
V
J
V
D S
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
S D
, D rain-to-S ource Voltage (V)
0 . 6
Forward Voltage
, S ource-to-Drain Voltage (V )
1
0 . 8
T = 2 5°C
20 µs P U LSE W IDTH
T = 15 0°C
J
IRF9410
J
3.0V
1 . 0
V
G S
= 0 V
1 0
1 . 2
A
A

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