IRF9410 International Rectifier, IRF9410 Datasheet - Page 5

• Manufacturer Part Number: IRF9410
• Description: MOSFET N-CH 30V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9410

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Continuous Drain (id) @ 25° C: -
• Other names: *IRF9410

100
1 0 0 0
0.1
10
0.00001
8 0 0
6 0 0
4 0 0
2 0 0
1
0
1
0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Typical Capacitance Vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Drain-to-Source Voltage
V
D S
V
C
C
C
, Drain-to-Source V oltage (V)
(THERMAL RESPONSE)
0.0001
G S
is s
rs s
o ss
SINGLE PULSE
= 0 V,
= C
= C
= C
C
C
C
rs s
i ss
o s s
gs
ds
gd
+ C
+ C
1 0
gd
g d
f = 1M H z
, C
0.001
ds
SH O RTE D
t , Rectangular Pulse Duration (sec)
1
0.01
1 0 0
A
20
16
12
8
4
0
0.1
0
I =
D
Fig 10. Typical Gate Charge Vs.
2.0A
Gate-to-Source Voltage
1. Duty factor D =
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
6
G
1
J
12
DM
x Z
t / t
1
thJA
IRF9410
V
P
2
18
DM
DS
+ T
10
= 15V
A
t
1
t
24
2
100
30