IRF9410 International Rectifier, IRF9410 Datasheet - Page 4

• Manufacturer Part Number: IRF9410
• Description: MOSFET N-CH 30V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9410

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Continuous Drain (id) @ 25° C: -
• Other names: *IRF9410

IRF9410
Fig 7. Typical On-Resistance Vs. Gate
0 . 1 4
0 . 1 2
0 . 1 0
0 . 0 8
0 . 0 6
0 . 0 4
0 . 0 2
0 . 0 0
2.0
1.5
1.0
0.5
0.0
Fig 5. Normalized On-Resistance
-60 -40 -20
3
I =
D
7.0A
V
Vs. Temperature
G S
T , Junction Temperature ( C)
J
6
- Gate-to-Source V olta ge (V )
Voltage
0
I
D
20
= 7.0A
40 60
9
80 100 120 140 160
1 2
V
°
GS
=
10V
1 5
A
2 0 0
1 6 0
1 2 0
8 0
4 0
0 . 0 5
0 . 0 4
0 . 0 3
0 . 0 2
Fig 6. Typical On-Resistance Vs. Drain
0
2 5
0
Fig 8. Maximum Avalanche Energy
Starting T , Junction Temperature (°C)
5 0
5
V
J
G S
I , Drain Current (A)
Vs. Drain Current
D
= 4.5V
V
Current
7 5
G S
1 0
= 10V
1 0 0
1 5
TOP
BOTTOM
1 2 5
2 0
3.7A
4.6A
I
2.1A
D
1 5 0
2 5
A
A