IRF7466 International Rectifier, IRF7466 Datasheet - Page 3

• Manufacturer Part Number: IRF7466
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7466

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2100pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7466

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1000
0.01
100
0.1
100
10
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
2.5
TOP
BOTTOM
T = 150 C
J
V
DS
V
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
3.0
GS
, Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
1
J
3.5
2.7V
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
4.0
J
DS
10
= 15V
°
4.5
5.0
100
1000
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
11A
V
DS
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
2.7V
40
60
IRF7466
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
10V
3
100