IRF7466 International Rectifier, IRF7466 Datasheet - Page 4

• Manufacturer Part Number: IRF7466
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7466

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2100pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7466

IRF7466
100000
10000
4
1000
100
0.1
100
10
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
Drain-to-Source Voltage
J
V
SD
0.6
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
Forward Voltage
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
1.0
T = 25 C
J
= C gs + C gd , C ds
Ciss
Coss
Crss
10
°
1.4
f = 1 MHZ
V
1.8
GS
SHORTED
= 0 V
2.2
100
1000
100
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
8.8A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
5
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
10
1
BY R
V
V
DS
DS
15
DS(on)
= 24V
= 15V
www.irf.com
20
10
25
10us
100us
1ms
10ms
100
30