IRF7466 International Rectifier, IRF7466 Datasheet - Page 6

• Manufacturer Part Number: IRF7466
• Description: MOSFET N-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7466

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2100pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7466

IRF7466
I
A S
12V
Fig 14a&b. Unclamped Inductive Test circuit
6
V
Fig 13a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.06
0.04
0.02
0.00
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(B R )D S S
D.U.T.
20
I
D
and Waveforms
and Waveform
I D , Drain Current (A)
+
-
V
DS
V GS = 4.5V
40
V
R G
GS
20V
V D S
V GS = 10V
t p
V
G
60
Q
I A S
GS
D .U .T
0.01
L
Charge
Q
Q
GD
G
80
1 5 V
DRIVE R
100
+
-
V D D
A
0.025
0.020
0.015
0.010
0.005
0.000
Fig 13. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
0
Fig 14c. Maximum Avalanche Energy
3.0
25
Starting T , Junction Temperature ( C)
4.0
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
5.0
J
75
6.0
I D = 11A
7.0
100
www.irf.com
TOP
BOTTOM
8.0
125
9.0
°
3.9A
7.0A
8.8A
I D
10.0
150