IRF7233 International Rectifier, IRF7233 Datasheet - Page 3

• Manufacturer Part Number: IRF7233
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7233

www.irf.com
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1 0 0
1 0 0
1 0
8 0
6 0
4 0
2 0
1
0
1.0
0
TOP
BO TTO M - 1.5V
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
G S
VG S
D S
2
1.5
, G a te -to -S o u rc e V o lta ge (V )
, D ra in-to-Source V oltage (V)
4
-1.5V
2.0
V
2 0 µ s P U L S E W ID TH
20µs PULSE W IDTH
T = 25°C
D S
J
6
T = 2 5 °C
J
= -1 0 V
2.5
T = 1 5 0 ° C
J
8
3.0
1 0
A
A
Fig 2. Typical Output Characteristics
1 0 0
2.0
1.5
1.0
0.5
0.0
8 0
6 0
4 0
2 0
Fig 4. Normalized On-Resistance
0
-60 -40 -20
0
T O P
B O TT O M - 1 .5 V
I =
D
-9.5A
-V
- 5 .0 V
- 4 .0 V
- 3 .5 V
- 3 .0 V
- 2 .5 V
- 2 .0 V
- 7 .5 V
T , Junction Temperature ( C)
V G S
Vs. Temperature
D S
2
J
, D rain-to-Sou rce V oltage (V )
0
20
4
40
-1 .5 V
60
IRF7233
20 µs PU L SE W ID TH
T = 1 50°C
6
J
80 100 120 140 160
V
°
GS
8
=
-4.5V
3
1 0
A