IRF7233 International Rectifier, IRF7233 Datasheet - Page 4

• Manufacturer Part Number: IRF7233
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7233

IRF7233
4
1 0 0
6 0 0 0
5 0 0 0
4 0 0 0
3 0 0 0
2 0 0 0
1 0
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0
Drain-to-Source Voltage
T = 150°C
J
-V
-V
C
C
C
S D
2
rss
iss
o ss
D S
Forward Voltage
V
C
C
C
, S ou rce-to-D ra in Voltage (V)
, D rain-to-So urc e Voltage (V)
G S
iss
rss
o ss
1.0
4
= 0V,
= C
= C
= C
T = 25°C
J
g s
g d
d s
+ C
+ C
6
g d
g d
f = 1kHz
, C
2.0
8
d s
SH ORTE D
V
G S
1 0
= 0V
3.0
1 2
A
A
1000
100
10
10
Fig 8. Maximum Safe Operating Area
1
8
6
4
2
0
0.1
0
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
I =
A
J
D
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-V
-9.5A
Gate-to-Source Voltage
10
DS
°
Q , Total Gate Charge (nC)
°
, Drain-to-Source Voltage (V)
G
20
1
BY R
30
DS(on)
40
V
DS
www.irf.com
10
=-10V
100us
1ms
10ms
50
60
100
70