IRF7233 International Rectifier, IRF7233 Datasheet - Page 6

• Manufacturer Part Number: IRF7233
• Description: MOSFET P-CH 12V 9.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7233

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 5V
• Input Capacitance (ciss) @ Vds: 6000pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7233

IRF7233
SO-8 Package Details
Part Marking
6
N O TE S :
5
- C -
6
- A -
5
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
E
D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
6X
0 .25 (.01 0)
e
8
1
2
B 8X
7
- B -
D
6
3
5
M C A S B S
5
4
e 1
A 1
A
0.2 5 (.0 10 )
H
0 .10 (.00 4)
M
A M
8 X
L
K x 45 °
6
8X
C
1.27 ( .0 50 )
D IM
6 .46 ( .25 5 )
A
A 1
B
C
D
E
e
e1
H
K
L
R E CO M M E ND E D F O O TP R IN T
3X
0 .16
.0532
.0040
.014
.150
.011
.0 075
.1 89
.2 284
M IN
.050 B A S IC
.025 B A S IC
0°
IN C H E S
M A X
.0688
.0098
.018
.157
.019
.0 098
.1 96
.2 440
.050
0 .72 (.02 8 )
8°
8 X
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M IL LIM E T E R S
1 .35
0 .10
0 .36
0 .19
4 .80
3 .81
0 .28
0.6 35 B A S IC
M IN
0 .41
1.2 7 B A S IC
5 .80
1 .78 (.07 0)
0 °
8X
1.27
M A X
1 .75
0 .25
0 .46
0.25
4.98
3 .99
6.20
0 .48
8°