IRF7477 International Rectifier, IRF7477 Datasheet - Page 2

• Manufacturer Part Number: IRF7477
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7477

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2710pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7477

Avalanche Characteristics
Diode Characteristics
IRF7477
Dynamic @ T
Static @ T
Symbol
E
I
Symbol
I
I
V
t
Q
t
Q
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
V
R
V
I
AR
I
S
SM
d(on)
r
d(off)
f
rr
rr
DSS
V
GSS
fs
AS
SD
(BR)DSS
DS(on)
GS(th)
g
gs
gd
oss
iss
oss
rss
rr
rr
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
–––
–––
––– 0.80
––– 0.65 –––
–––
–––
35
–––
–––
30
0.029
2710 –––
1120 –––
–––
–––
130
140
–––
–––
–––
–––
–––
100
–––
––– -200
6.5
8.2
9.8
5.9
6.5
7.7
25
91
90
30
12
19
140
200
140
210
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
2.5
2.3
38
110
–––
8.5
20
10
m
nC
nC
nC
ns
pF
V/°C
µA
nA
ns
ns
V
S
Typ.
A
V
V
–––
–––
I
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
D
D
Reference to 25°C, I
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
GS
G
= 11A
= 11A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= 15V, I
= 15V
= 15V
= V
= 24V, V
= 24V, V
= 4.5V
= 0V, V
= 15V
= 4.5V
= 0V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
GS
, I
D
S
F
DS
D
D
D
Conditions
S
F
D
= 250µA
GS
GS
Conditions
= 11A, V
= 11A, V
Conditions
= 11A
= 14A
= 250µA
= 11A, V
= 11A, V
= 11A
= 15V
Max.
500
8.2
= 0V
= 0V, T
www.irf.com
D
GS
R
= 1mA
GS
=15V
R
J
=15V
= 125°C
= 0V
G
= 0V
Units
mJ
A
S
D