IRF7477 International Rectifier, IRF7477 Datasheet - Page 6

• Manufacturer Part Number: IRF7477
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7477

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2710pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7477

IRF7477
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
0.009
0.008
0.007
0.006
0.005
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(B R )D S S
20
D.U.T.
I
D
and Waveforms
and Waveform
I D , Drain Current (A)
+
-
V
DS
40
V
R G
GS
20V
V D S
60
t p
V
G
V GS = 4.5V
Q
I A S
V GS = 10V
GS
D .U .T
0.01
L
80
Charge
Q
Q
GD
G
100
1 5 V
DRIVE R
120
+
-
V D D
A
0.012
0.010
0.008
0.006
Fig 13. On-Resistance Vs. Gate Voltage
1200
1000
800
600
400
200
0
Fig 15c. Maximum Avalanche Energy
3.0
25
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
50
3.4
Vs. Drain Current
J
75
3.8
100
I D = 14A
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TOP
BOTTOM
4.2
125
°
3.7A
6.6A
8.2A
I D
4.6
150