IRF7477 International Rectifier, IRF7477 Datasheet - Page 4

• Manufacturer Part Number: IRF7477
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7477

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2710pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7477

IRF7477
100000
10000
4
1000
100
1000
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
1
Fig 7. Typical Source-Drain Diode
0.2
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V
T = 150 C
J
SD
0.4
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
°
0.6
Coss
Crss
Ciss
10
T = 25 C
0.8
f = 1 MHZ
J
°
V
1.0
GS
SHORTED
= 0 V
1.2
100
1000
100
10
12
10
1
8
6
4
2
0
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
Tc = 25°C
Tj = 150°C
Single Pulse
11A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q , Total Gate Charge (nC)
G
1
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
30
10
DS
DS
= 24V
= 15V
www.irf.com
40
100µsec
1msec
10msec
100
50
1000
60