MTW32N20E ON Semiconductor, MTW32N20E Datasheet

MTW32N20E

Manufacturer Part Number

MTW32N20E

Description

MOSFET N-CH 200V 32A TO-247

Manufacturer

ON Semiconductor

Datasheet

1.MTW32N20EG.pdf (7 pages)

Specifications of MTW32N20E

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

75 mOhm @ 16A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

32A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

120nC @ 10V

Input Capacitance (ciss) @ Vds

5000pF @ 25V

Power - Max

180W

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MTW32N20EOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

MTW32N20E

Manufacturer:

Quantity:

12 500

Company:

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Part Number:

MTW32N20E

Manufacturer:

MOTOROLA/摩托罗拉

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MTW32N20EG

Manufacturer:

NXP

Quantity:

2 000

Current page: 1 of 7
Download datasheet (183Kb)

MTW32N20E

Power MOSFET

32 Amps, 200 Volts

N−Channel TO−247

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain−to−source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical and

offer additional safety margin against unexpected voltage transients.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

May, 2010 − Rev. 7

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain−Source Voltage

Drain−Gate Voltage (R

Gate−Source Voltage − Continuous

Drain Current − Continuous

Drain Current

Total Power Dissipation

Derate above 25°C

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

This advanced Power MOSFET is designed to withstand high

Fast Recovery Diode

Avalanche Energy Specified

Source−to−Drain Diode Recovery Time Comparable to a Discrete

Diode is Characterized for Use in Bridge Circuits

Isolated Mounting Hole

This is a Pb−Free Device*

= 32 Apk, L = 1.58 mH, R

DSS

− Junction−to−Case

− Junction−to−Ambient

= 50 Vdc, V

and V

DS(on)

− Continuous @ 100°C

− Single Pulse (t

Rating

= 10 Vpk,

= 25°C

Specified at Elevated Temperature

= 1.0 MW)

= 25°C unless otherwise noted)

= 25 W )

≤ 10 ms)

Symbol

DGR

, T

DSS

qJC

qJA

stg

−55 to 150

Value

± 20

1.44

200

128

180

810

260

0.7

W/°C

°C/W

Unit

Vdc

Adc

Apk

°C

MTW32N20EG

Device

32 AMPERES, 200 VOLTS

CASE 340K

TO−247AE

STYLE 1

ORDERING INFORMATION

http://onsemi.com

DS(on)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

TO−247

N−Channel

AND PIN ASSIGNMENT

MARKING DIAGRAM

Gate

= 75 mW

Publication Order Number:

MTW32N20E

AYWWG

4 Drain

Drain

MTW32N20E/D

30 Units/Rail

Shipping

Source

Related parts for MTW32N20E

MTW32N20E Summary of contents

Page 1

... AMPERES, 200 VOLTS DS(on) N−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain MTW32N20E AYWWG TO−247AE CASE 340K STYLE Gate Source 2 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping TO−247 30 Units/Rail (Pb−Free) Publication Order Number: MTW32N20E/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 200 Vdc 200 Vdc, V ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 100 25° DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. 0. 100°C J ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

T = 25° 160 TOTAL ...

Page 6

SINGLE PULSE 200 T = 25°C C 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.2 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...

Page 7

... Q 3.55 3.65 0.140 0.144 R 5.0 NOM 0.197 NOM U 5.5 BSC 0.217 BSC V 3.0 3.4 0.118 0.134 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTW32N20E/D ...

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