MTW32N20E ON Semiconductor, MTW32N20E Datasheet
MTW32N20E
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MTW32N20E Summary of contents
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... AMPERES, 200 VOLTS DS(on) N−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 Drain MTW32N20E AYWWG TO−247AE CASE 340K STYLE Gate Source 2 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping TO−247 30 Units/Rail (Pb−Free) Publication Order Number: MTW32N20E/D ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = 200 Vdc 200 Vdc, V ...
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TYPICAL ELECTRICAL CHARACTERISTICS 100 25° DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. 0. 100°C J ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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T = 25° 160 TOTAL ...
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SINGLE PULSE 200 T = 25°C C 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.2 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...
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... Q 3.55 3.65 0.140 0.144 R 5.0 NOM 0.197 NOM U 5.5 BSC 0.217 BSC V 3.0 3.4 0.118 0.134 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MTW32N20E/D ...