MTW32N20E ON Semiconductor, MTW32N20E Datasheet - Page 6

• Manufacturer Part Number: MTW32N20E
• Description: MOSFET N-CH 200V 32A TO-247
• Manufacturer: ON Semiconductor

Specifications of MTW32N20E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 5000pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTW32N20EOS

1000
200
100
0.2
0.1
20
10
2
1
1
0.002
0.001
0.02
0.01
0.2
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
1
GS
C
0.01
= 25°C
2
= 20 V
D = 0.5
0.01
V
DS
0.05
0.02
0.2
0.1
0.02
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
R
THERMAL LIMIT
PACKAGE LIMIT
10
DS(on)
20
LIMIT
0.1
0.2
100
200
Figure 13. Thermal Response
SAFE OPERATING AREA
10 ms
.1
1
10
dc
http://onsemi.com
1
1000
6
2
t, TIME (ms)
P
750
600
450
300
150
(pk)
0
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
t
1
t
2
10
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
50
20
1
/t
2
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
75
J(pk)
qJC
qJC
(t) = r(t) R
= 0.7°C/W MAX
- T
100
C
= P
(pk)
qJC
100
1
200
R
qJC
I
D
(t)
= 32 A
125
1000
150