MTD6N15T4 ON Semiconductor, MTD6N15T4 Datasheet - Page 3

• Manufacturer Part Number: MTD6N15T4
• Description: MOSFET N-CH 150V 6A DPAK
• Manufacturer: ON Semiconductor

Specifications of MTD6N15T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTD6N15T4OSCT

0.30
0.25
0.20
0.15
0.10
0.05
24
20
16
12
14
12
10
8
4
0
8
6
4
2
0
0
0
0
Figure 6. On−Resistance versus Drain Current
10 V
V
GS
V
DS
Figure 2. On−Region Characteristics
= 10 V
= 10 V
10
Figure 4. Transfer Characteristics
V
4
V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
I
D
, DRAIN CURRENT (AMPS)
20
8
T
9 V
8 V
7 V
6 V
5 V
J
− 55°C
100°C
25°C
= 100°C
30
12
6
− 55°C
TYPICAL ELECTRICAL CHARACTERISTICS
T
40
16
J
= 25°C
8
50
20
T
J
= 25°C
http://onsemi.com
MTD6N15
60
10
3
3.6
3.2
2.8
2.4
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
2
2
0
2
0
− 50
− 50
− 50
Figure 3. Gate−Threshold Voltage Variation
V
I
V
I
D
D
GS
GS
= 0.25 mA
Figure 5. Breakdown Voltage Variation
= 3 A
= 0 V
= 10 V
Figure 7. On−Resistance Variation
0
0
T
T
T
0
J
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
With Temperature
With Temperature
With Temperature
50
50
50
100
100
V
I
D
DS
= 1 mA
100
= V
150
150
GS
150
200
200