MTD6N15T4 ON Semiconductor, MTD6N15T4 Datasheet - Page 5
![MOSFET N-CH 150V 6A DPAK](/photos/5/30/53089/dpak_369c_sml.jpg)
MTD6N15T4
Manufacturer Part Number
MTD6N15T4
Description
MOSFET N-CH 150V 6A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.MTD6N15T4G.pdf
(6 pages)
Specifications of MTD6N15T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MTD6N15T4OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTD6N15T4
Manufacturer:
MOT/ON
Quantity:
12 500
Part Number:
MTD6N15T4
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MTD6N15T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MTD6N15T4G
Manufacturer:
ON/安森美
Quantity:
20 000
R
PULSE GENERATOR
gen
1600
1200
2000
800
400
0
15
Figure 13. Switching Test Circuit
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
V
50 W
DS
= 0
Figure 11. Capacitance Variation
5
V
GS
0
V
z = 50 W
DS
5
10
V
in
50 W
15
R
L
20
V
DD
DUT
RESISTIVE SWITCHING
T
V
25
J
GS
V
C
= 25°C
C
C
out
oss
rss
= 0
iss
http://onsemi.com
30
MTD6N15
35
INPUT, V
OUTPUT, V
INVERTED
5
in
t
d(on)
16
12
8
0
4
out
0
10%
T
I
D
J
Figure 14. Switching Waveforms
= 6 A
= 25°C
V
t
on
Figure 12. Gate Charge versus
50%
DS
4
10%
= 50 V
Gate−To−Source Voltage
Q
g
, TOTAL GATE CHARGE (nC)
t
r
PULSE WIDTH
90%
75 V
8
t
d(off)
12
120 V
90%
t
50%
off
90%
16
t
f
20