NTF3055-100T3LF ON Semiconductor, NTF3055-100T3LF Datasheet - Page 6

MOSFET N-CH 60V 3A SOT223

NTF3055-100T3LF

Manufacturer Part Number
NTF3055-100T3LF
Description
MOSFET N-CH 60V 3A SOT223
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTF3055-100T3LF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
455pF @ 25V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTF3055-100T3LFOS
PUBLICATION ORDERING INFORMATION
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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0.08 (0003)
e1
H
E
A1
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
1
e
b1
D
4
2
*For additional information on our Pb−Free strategy and
3
soldering details, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
b
0.079
E
A
2.0
0.079
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2.0
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
0.059
q
1.5
SOT−223 (TO−261)
http://onsemi.com
CASE 318E−04
0.091
2.3
ISSUE L
0.15
3.8
6
L1
0.091
C
2.3
SCALE 6:1
STYLE 3:
NOTES:
DIM
0.248
H
A1
b1
L1
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
A
b
D
E
q
c
e
PIN 1. GATE
6.3
inches
E
mm
Y14.5M, 1982.
2. DRAIN
3. SOURCE
4. DRAIN
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
MILLIMETERS
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
1.75
7.00
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
2.00
7.30
10°
0.060
0.001
0.024
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0.115
MIN
NTF3055−100/D
INCHES
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
NOM
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
MAX
10°

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