NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 2

• Manufacturer Part Number: NTR2101PT1G
• Description: MOSFET P-CH 8V 3.7A SOT-23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTR2101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1173pF @ 4V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.052 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.052Ohm
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTR2101PT1GOSTR

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Temperature Coefficient
Temperature Coefficient
Parameter
(T
J
= 25°C unless otherwise stated)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
(BR)DSS
C
C
t
t
GS(TH)
C
G(TOT)
I
I
Q
Q
DS(on)
V
g
d(on)
d(off)
GSS
DSS
OSS
RSS
ISS
t
FS
GS
GD
t
SD
r
f
/T
http://onsemi.com
/T
J
J
V
V
V
GS
V
V
V
V
GS
V
V
V
I
V
V
DS
V
2
I
S
GS
GS
GS
GS
D
GS
GS
GS
DS
GS
GS
= −1.2 A
= −4.5 V, V
= −4.5 V, V
= −1.2 A, R
= −6.4 V
Test Condition
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −5.0 V, I
= 0 V,
= V
= 0 V,
= 0 V, V
= 0 V, f = 1.0 MHz,
= 0 V, I
V
I
DS
D
DS
= −3.5 A
= −4.0 V
, I
D
D
GS
= −250 mA
DS
DD
= −250 mA
D
D
D
G
D
= ±8.0 V
= −3.5 A
= −3.0 A
= −3.5 A
= 6.0 W
= −2.0 A
T
= −4.0 V,
= −4.0 V,
T
T
J
J
J
= 125°C
= 25°C
= 25°C
−0.40
−8.0
Min
0.0027
15.75
−0.73
1173
Typ
289
218
9.0
3.8
2.5
7.4
10
39
52
79
12
38
31
−100
±100
Max
−1.0
−1.0
−1.2
120
52
72
15
15
25
58
51
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
ns
V
V
S
V