NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 4

• Manufacturer Part Number: NTR2101PT1G
• Description: MOSFET P-CH 8V 3.7A SOT-23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTR2101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1173pF @ 4V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.052 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.052Ohm
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTR2101PT1GOSTR

2500
2000
1500
1000
1000
500
100
10
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
1
−4
V
I
V
D
DD
GS
Figure 9. Resistive Switching Time Variation
= −1.0 A
C
V
= −4.0 V
= −4.5 V
RSS
DS
−2
Figure 7. Capacitance Variation
= 0
−V
R
G
GS
versus Gate Resistance
, GATE RESISTANCE (W)
0
t
d(off)
−V
C
DS
ISS
V
GS
10
2
t
f
t
= 0
d(on)
C
t
OSS
r
4
T
J
= 25°C
6
http://onsemi.com
100
8
4
5
4
3
2
1
0
0
Drain−to−Source Voltage versus Total Charge
6
5
4
3
2
1
0
V
0.3
DS
Q
GS
2
V
T
Figure 10. Diode Forward Voltage versus
J
GS
Figure 8. Gate−to−Source and
= 25°C
−V
Q
0.45
= 0 V
G
SD
, TOTAL GATE CHARGE (nC)
4
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
DS
0.6
6
Q
T
Current
0.75
8
10
0.9
T
I
D
J
V
= −3.5 A
= 25°C
GS
12
1.05
14
5
4
3
2
1
0
1.2