MTP23P06VG ON Semiconductor, MTP23P06VG Datasheet
MTP23P06VG
Specifications of MTP23P06VG
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MTP23P06VG Summary of contents
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... E 794 mJ AS °C/W R 1.67 qJC 62.5 R qJA °C T 260 L Device MTP23P06V MTP23P06VG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 23 AMPERES, 60 VOLTS R = 120 mW DS(on) P−Channel MARKING DIAGRAM AND PIN ASSIGNMENT 4 4 Drain TO−220AB ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 0.25 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...
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TYPICAL ELECTRICAL CHARACTERISTICS 10V T = 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL GATE CHARGE (nC) g Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE ...
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SINGLE PULSE T = 25°C C 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...