MTP23P06VG ON Semiconductor, MTP23P06VG Datasheet - Page 6

• Manufacturer Part Number: MTP23P06VG
• Description: MOSFET P-CH 60V 23A TO220AB
• Manufacturer: ON Semiconductor

Specifications of MTP23P06VG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1620pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms
• Forward Transconductance Gfs (max / Min): 11.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 23 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTP23P06VGOS

100
0.1
10
1
0.1
1.00
0.10
0.01
V
SINGLE PULSE
T
1.0E−05
C
GS
Figure 11. Maximum Rated Forward Biased
= 25°C
= 20 V
D = 0.5
0.2
0.1
SINGLE PULSE
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
1
0.01
0.02
LIMIT
1.0E−04
0.05
100 ms
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
10 ms
I
S
1.0E−03
dc
SAFE OPERATING AREA
Figure 13. Thermal Response
t
p
http://onsemi.com
MTP23P06V
100
di/dt
t, TIME (s)
t
a
6
1.0E−02
t
rr
t
800
700
600
500
400
300
200
100
b
I
S
P
0
(pk)
0.25 I
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
S
t
1
t
2
50
T
J
1.0E−01
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
TIME
1
75
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
100
(t) = r(t) R
− T
1.0E+00
C
= P
125
(pk)
qJC
1
R
qJC
(t)
I
150
D
= 23 A
1.0E+01
175