MTP23P06VG ON Semiconductor, MTP23P06VG Datasheet - Page 6
![MOSFET P-CH 60V 23A TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MTP23P06VG
Manufacturer Part Number
MTP23P06VG
Description
MOSFET P-CH 60V 23A TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MTP23P06V.pdf
(7 pages)
Specifications of MTP23P06VG
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1620pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Forward Transconductance Gfs (max / Min)
11.5 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
23 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MTP23P06VGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTP23P06VG
Manufacturer:
ON
Quantity:
13 600
100
0.1
10
1
0.1
1.00
0.10
0.01
V
SINGLE PULSE
T
1.0E−05
C
GS
Figure 11. Maximum Rated Forward Biased
= 25°C
= 20 V
D = 0.5
0.2
0.1
SINGLE PULSE
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
1
0.01
0.02
LIMIT
1.0E−04
0.05
100 ms
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
10 ms
I
S
1.0E−03
dc
SAFE OPERATING AREA
Figure 13. Thermal Response
t
p
http://onsemi.com
MTP23P06V
100
di/dt
t, TIME (s)
t
a
6
1.0E−02
t
rr
t
800
700
600
500
400
300
200
100
b
I
S
P
0
(pk)
0.25 I
25
DUTY CYCLE, D = t
Figure 12. Maximum Avalanche Energy versus
S
t
1
t
2
50
T
J
1.0E−01
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
TIME
1
75
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
100
(t) = r(t) R
− T
1.0E+00
C
= P
125
(pk)
qJC
1
R
qJC
(t)
I
150
D
= 23 A
1.0E+01
175