MTP23P06VG ON Semiconductor, MTP23P06VG Datasheet - Page 2
![MOSFET P-CH 60V 23A TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MTP23P06VG
Manufacturer Part Number
MTP23P06VG
Description
MOSFET P-CH 60V 23A TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.MTP23P06V.pdf
(7 pages)
Specifications of MTP23P06VG
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1620pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Forward Transconductance Gfs (max / Min)
11.5 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
23 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MTP23P06VGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTP23P06VG
Manufacturer:
ON
Quantity:
13 600
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
SWITCHING CHARACTERISTICS (Note 2)
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
Drain−Source Breakdown Voltage
(V
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
(V
Gate−Body Leakage Current (V
Gate Threshold Voltage
(V
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (V
Drain−Source On−Voltage
(V
(V
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 8)
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(V
GS
DS
DS
DS
GS
GS
DS
= 60 Vdc, V
= 60 Vdc, V
= V
= 0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10.9 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
= 0.25 mAdc)
GS
GS
= 23 Adc)
= 11.5 Adc, T
D
= 0 Vdc)
= 0 Vdc, T
= 11.5 Adc)
J
GS
J
= 150°C)
= 150°C)
= ± 15 Vdc, V
Characteristic
GS
(V
(V
(I
(T
DS
= 10 Vdc, I
DS
S
J
= 23 Adc, V
= 48 Vdc, I
= 25°C unless otherwise noted)
= 25 Vdc, V
(V
(I
V
(I
DS
S
GS
S
DD
= 23 Adc, V
= 23 Adc, V
= 0 Vdc)
dI
= 10 Vdc, R
= 30 Vdc, I
D
S
= 11.5 Adc)
/dt = 100 A/ms)
D
GS
GS
http://onsemi.com
= 23 Adc, V
= 0 Vdc, T
MTP23P06V
= 0 Vdc, f = 1.0 MHz)
GS
GS
D
G
= 23 Adc,
= 0 Vdc,
= 0 Vdc)
= 9.1 W)
2
GS
J
= 150°C)
= 10 Vdc)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
L
L
t
t
t
oss
t
FS
t
SD
RR
iss
rss
rr
a
b
r
f
D
S
T
1
2
3
Min
2.0
5.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.093
142.2
100.5
0.804
1160
60.5
11.5
13.8
98.3
41.7
Typ
380
105
2.8
5.3
7.0
2.2
1.8
3.5
4.5
7.5
41
62
38
18
14
−
−
−
−
−
−
1620
Max
0.12
100
100
530
210
200
120
4.0
3.3
3.2
3.5
10
30
80
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W