NTB5605PT4G ON Semiconductor, NTB5605PT4G Datasheet

NTB5605PT4G

Manufacturer Part Number

NTB5605PT4G

Description

MOSFET P-CH 60V 18.5A D2PAK

Manufacturer

ON Semiconductor

Datasheet

1.NTB5605P.pdf (7 pages)

Specifications of NTB5605PT4G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

140 mOhm @ 8.5A, 5V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

18.5A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 5V

Input Capacitance (ciss) @ Vds

1190pF @ 25V

Power - Max

88W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.14 Ohm @ 5 V

Forward Transconductance Gfs (max / Min)

12 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18.5 A

Power Dissipation

88000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB5605PT4G

Manufacturer:

Quantity:

6 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTB5605PT4G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
Download datasheet (90Kb)

NTB5605P, NTB5605

Power MOSFET

-60 Volt, -18.5 Amp

P-Channel, D

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size (Cu Area 1.127 in

2. When surface mounted to an FR4 board using the minimum recommended

January, 2008 - Rev. 3

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature

Single Pulse Drain-to-Source Avalanche

Energy (V

L = 3.0 mH, R

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

Junction-to-Case (Drain) – Steady State

Designed for Low R

Withstands High Energy in Avalanche and Commutation Modes

Pb-Free Packages are Available

Power Supplies

PWM Motor Control

Converters

Power Management

pad size (Cu Area 0.41 in

= 25 V, V

= 25 W)

Parameter

DS(on)

Steady

= 5.0 V, I

PAK

State

= 25°C unless otherwise noted)

= 10 ms

= 15 A,

= 25°C

Symbol

DSS

STG

qJC

-55 to

Value

-18.5

$20

Max

-60

-55

175

338

260

1.7

°C/W

Unit

°C

NTB5605P

NTB5605PG

NTB5605PT4

NTB5605PT4G

NTB5605T4G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(BR)DSS

Device

-60 V

CASE 418B

STYLE 2

ORDERING INFORMATION

PAK

http://onsemi.com

120 mW @ -5.0 V

DS(on)

P-Channel

(Pb-Free)

Package

= P or blank

= Assembly Location

= Year

= Work Week

= Pb-Free Package

PAK

MARKING DIAGRAM

Publication Order Number:

& PIN ASSIGNMENT

TYP

Gate

NTB5605xG

AYWW

800 Tape & Reel

Drain

50 Units/Rail

Shipping

NTB5605P/D

-18.5 A

MAX

Source

†

Related parts for NTB5605PT4G

NTB5605PT4G Summary of contents

Page 1

... L Symbol Max Unit °C/W R 1.7 qJC Device NTB5605P NTB5605PG 2 ). NTB5605PT4 NTB5605PT4G NTB5605T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on) D 120 mW @ -5.0 V -18 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On Resistance Forward Transconductance Drain-to-Source On Voltage CHARGES, CAPACITANCES AND GATE ...

Page 3

25° ...

Page 4

2200 C 2000 iss 1800 1600 1400 C rss 1200 1000 800 600 400 C rss 200 GATE-TO-SOURCE OR ...

Page 5

D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE 0.1 0.0001 0.001 I S Figure 14. Diode Reverse Recovery Waveform NTB5605P, NTB5605 0.01 0.1 t, TIME (s) Figure 13. Thermal Response di/ TIME ...

Page 6

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W-W VIEW W-W 1 10.66 0.42 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB5605P, NTB5605 PACKAGE DIMENSIONS 2 D PAK CASE 418B-04 ISSUE ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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