NTB5605PT4G ON Semiconductor, NTB5605PT4G Datasheet - Page 2

• Manufacturer Part Number: NTB5605PT4G
• Description: MOSFET P-CH 60V 18.5A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB5605PT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.5 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
Drain-to-Source On Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Characteristic
(T
J
= 25°C unless otherwise noted)
V
Symbol
V
(Br)DSS
Q
R
V
V
(Br)DSS
t
t
I
C
G(TOT)
Q
I
DS(on)
DS(on)
Q
Q
NTB5605P, NTB5605
GS(th)
C
C
V
g
d(on)
d(off)
DSS
GSS
t
t
t
oss
t
t
FS
rss
GS
GD
SD
RR
iss
rr
a
b
r
f
http://onsemi.com
/T
J
V
V
V
V
GS
2
V
V
V
V
I
DS
V
V
V
V
GS
V
GS
S
V
I
GS
GS
GS
GS
DS
GS
GS
DS
D
GS
GS
= -17 A
= 0 V, dI
= -60 V
= -5.0 V, V
= -5.0 V, V
= -17 A, R
Test Condition
= 0 V
= -5.0 V, I
= -5.0 V, I
= 0 V
= 0 V, V
= V
= -5.0 V, I
= -10 V, I
= 0 V, I
= 0 V, f = 1.0 MHz,
V
I
I
DS
D
S
DS
= -17 A
= -17 A
, I
= -25 V
S
D
/dt = 100 A/ms,
GS
D
= -250 mA
D
G
= -250 mA
D
D
DS
DD
D
= "20 V
T
T
= -8.5 A
= 9.1 W
= -8.5 A
= -8.5 A
T
T
= -17 A
J
J
= -48 V,
= -30 V,
J
J
= 125°C
= 125°C
= 25°C
= 25°C
-1.0
Min
-60
-1.55
-1.5
12.5
-1.4
0.14
Typ
-64
120
140
730
211
122
4.0
7.0
12
67
13
29
75
60
39
21
"100
1190
Max
-1.0
-2.0
-1.3
-2.5
-10
140
300
120
183
150
22
25
58
mV/°C
Unit
mW
nA
nC
nC
mA
pF
ns
ns
V
V
S
V
V