NTB5605PT4G ON Semiconductor, NTB5605PT4G Datasheet - Page 4

• Manufacturer Part Number: NTB5605PT4G
• Description: MOSFET P-CH 60V 18.5A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB5605PT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 8.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.5 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
2400
2200
2000
1800
1600
1400
1200
1000
100
0.1
800
600
400
200
1000
10
100
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
1
0
10
0.1
10
1
1
V
SINGLE PULSE
T
C
C
C
Figure 11. Maximum Rated Forward Biased
V
GS
rss
iss
Figure 9. Resistive Switching Time Variation
DS
= 25°C
-V
= -20 V
= 0 V
5
DS
t
t
d(off)
d(on)
-V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
t
t
GS
r
f
R
Thermal Limit
Package Limit
0
DS(on)
Safe Operating Area
R
1
-V
vs. Gate Resistance
V
G
GS
, GATE RESISTANCE (W)
DS
(VOLTS)
C
Limit
= 0 V
rss
5
10 ms
dc
10
10
1 ms
100 ms
10
15
10 ms
V
I
V
D
DD
GS
T
= -17 A
NTB5605P, NTB5605
J
= 25°C
= -30 V
= -5.0 V
20
http://onsemi.com
C
C
iss
oss
100
25
100
4
8
7
6
5
4
3
2
1
0
400
350
300
250
200
150
100
0
20
15
10
50
V
5
0
0
25
DS
0
Drain-to-Source Voltage vs. Total Charge
Q
Figure 10. Diode Forward Voltage vs. Current
GS
V
T
Figure 12. Maximum Avalanche Energy vs.
J
GS
-V
= 25°C
0.25
T
Figure 8. Gate-to-Source and
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
SD
Q
4
50
Starting Junction Temperature
g
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
, TOTAL GATE CHARGE (nC)
0.5
Q
T
Q
75
0.75
DS
8
1
100
12
1.25
V
I
T
GS
D
J
I
D
= -17 A
= 25°C
125
= -15 A
1.5
16
1.75
45
15
0
60
30
150