NTD3055L170 ON Semiconductor, NTD3055L170 Datasheet - Page 3

• Manufacturer Part Number: NTD3055L170
• Description: MOSFET N-CH 60V 9A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055L170

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 275pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.35
0.25
0.15
0.05
20
16
12
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.3
0.2
0.1
8
4
0
2
1
0
−50
0
4
V
6 V
GS
V
−25
I
V
8 V
D
1
DS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
= 10 V
= 4.5 A
6
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
= 5 V
GS
Figure 3. On−Resistance versus
T
T
J
0
, JUNCTION TEMPERATURE (°C)
= 10 V
2
J
I
= 100°C
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
8
25
T
3
J
Temperature
T
= 25°C
J
10
50
= −55°C
4
75
12
5
100
14
6
125
16
3.5 V
http://onsemi.com
4 V
7
3 V
150
5 V
175
8
18
3
1000
0.35
0.25
0.15
0.05
100
0.3
0.2
0.1
10
16
12
1
8
4
0
0
1
4
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
T
V
V
1.5
V
J
DS
GS
V
V
GS
= 100°C
DS
GS
T
≥ 10 V
= 15 V
10
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
2
8
I
D
, DRAIN CURRENT (AMPS)
2.5
20
and Gate Voltage
versus Voltage
12
3
T
T
T
T
T
T
J
J
J
J
J
J
= 150°C
= 125°C
= 100°C
= 100°C
= −55°C
= 25°C
T
3.5
30
J
= −55°C
16
4
40
4.5
20
5
50
5.5
24
60
6