NTD3055L170 ON Semiconductor, NTD3055L170 Datasheet - Page 6

• Manufacturer Part Number: NTD3055L170
• Description: MOSFET N-CH 60V 9A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055L170

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 275pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

100
0.1
10
1
0.1
001
V
SINGLE PULSE
T
10
GS
C
1
Figure 11. Maximum Rated Forward Biased
0.00001
= 25°C
V
= 15 V
DS
0.01
D = 0.5
0.05
0.2
0.1
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
1
100 ms
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.0001
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10
I
10 ms
S
0.001
Figure 13. Thermal Response
SAFE OPERATING AREA
10 ms
t
p
dc
http://onsemi.com
100
di/dt
t, TIME (ms)
t
a
P
6
(pk)
t
0.01
rr
DUTY CYCLE, D = t
t
b
I
S
32
24
16
t
0.25 I
1
8
0
25
t
2
Figure 12. Maximum Avalanche Energy versus
S
T
J
, STARTING JUNCTION TEMPERATURE (°C)
50
Starting Junction Temperature
0.1
1
TIME
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
75
J(pk)
qJC
(t) = r(t) R
− T
C
100
= P
qJC
(pk)
1
1
R
125
qJC
(t)
I
D
= 7.75 A
150
10
175