NTD3055L170 ON Semiconductor, NTD3055L170 Datasheet - Page 7

• Manufacturer Part Number: NTD3055L170
• Description: MOSFET N-CH 60V 9A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055L170

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Input Capacitance (ciss) @ Vds: 275pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

V
S
F
1
B
R
G
4
2
3
L
A
K
D
2 PL
0.13 (0.005)
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
H
0.228
J
5.80
M
C
T
−T−
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
E
0.244
6.20
SEATING
PLANE
U
http://onsemi.com
CASE 369C−01
ISSUE C
DPAK
0.101
2.58
7
0.118
3.0
0.063
1.6
SCALE 3:1
6.172
0.243
Z
inches
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
PER ANSI Y14.5M, 1982.
STYLE 2:
DIM
G
A
B
C
D
E
F
H
K
L
R
S
U
V
Z
PIN 1. GATE
J
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.102
0.180
0.025
0.020
0.035
0.155
MIN
0.180 BSC
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.114
0.215
0.040
0.050
MAX
−−−
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
2.60
4.57
0.63
0.51
0.89
3.93
MIN
4.58 BSC
2.29 BSC
MAX
6.22
6.73
2.38
0.88
0.58
1.14
1.01
0.58
2.89
5.45
1.01
1.27
−−−
−−−