NTD4815N-35G ON Semiconductor, NTD4815N-35G Datasheet - Page 3

• Manufacturer Part Number: NTD4815N-35G
• Description: MOSFET N-CH 35A 30V IPAK TRIMMED
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTD4815N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
http://onsemi.com
V
GS
V
V
I
3
GS
GS
S
I
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
0.0164
17.6
18.4
0.92
15.3
2.49
1.88
3.46
Typ
6.3
2.3
1.0
8.7
6.6
2.6
5.5
Max
1.2
Unit
nH
ns
ns
nC
W
V