NTD4815N-35G ON Semiconductor, NTD4815N-35G Datasheet - Page 6

• Manufacturer Part Number: NTD4815N-35G
• Description: MOSFET N-CH 35A 30V IPAK TRIMMED
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTD4815N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD4815NT4G
NTD4815NT4H
NTD4815N−1G
NTD4815N−35G
0.01
1.0
0.1
1.0E-05
Device
0.02
D = 0.5
0.05
0.1
0.2
SINGLE PULSE
0.01
1.0E-04
100
0.1
10
1
(Pb−Free, Halide−Free)
1
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb−Free)
(Pb−Free)
(Pb−Free)
TYPICAL PERFORMANCE CURVES
Package
125°C
Figure 13. Avalanche Characteristics
DPAK
DPAK
IPAK
1.0E-03
Figure 14. Thermal Response
10
http://onsemi.com
PULSE WIDTH (ms)
t, TIME (ms)
100°C
P
6
(pk)
1.0E-02
DUTY CYCLE, D = t
t
1
100
t
2
25°C
1.0E-01
1
/t
2500 / Tape & Reel
2500 / Tape & Reel
2
1000
75 Units / Rail
75 Units / Rail
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
Shipping
qJC
(t) = r(t) R
− T
C
†
= P
qJC
(pk)
1.0E+00
1
R
qJC
(t)
1.0E+01