NTD4815N-35G ON Semiconductor, NTD4815N-35G Datasheet - Page 5

MOSFET N-CH 35A 30V IPAK TRIMMED

NTD4815N-35G

Manufacturer Part Number
NTD4815N-35G
Description
MOSFET N-CH 35A 30V IPAK TRIMMED
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of NTD4815N-35G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
770pF @ 12V
Power - Max
1.26W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4815N-35G
Manufacturer:
ON
Quantity:
12 500
1000
1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
100
1500
1400
1300
1200
1000
1100
10
10
0.1
900
800
700
600
500
400
300
200
100
1
1
0
1
0.1
10
C
C
Figure 11. Maximum Rated Forward Biased
t
t
V
d(on)
iss
rss
d(off)
V
DS
DS
t
t
5
f
Figure 9. Resistive Switching Time
r
V
SINGLE PULSE
T
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
C
GS
GS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
R
= 25°C
G
= 20 V
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
0
DS(on)
Safe Operating Area
V
C
V
1
GS
rss
DS
= 0 V
5
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
V
I
V
D
20
DD
GS
= 30 A
T
= 15 V
= 11.5 V
J
10 ms
1 ms
100 ms
10 ms
dc
= 25°C
http://onsemi.com
25
C
C
iss
oss
100
100
30
5
6
5
4
3
2
1
0
0
Figure 8. Gate−To−Source and Drain−To−Source
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0.4
0
25
V
Figure 10. Diode Forward Voltage vs. Current
DS
1
V
Figure 12. Maximum Avalanche Energy vs.
T
Q
GS
J
V
1
= 25°C
0.5
SD
Q
= 0 V
50
G
Voltage vs. Total Charge
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
, TOTAL GATE CHARGE (nC)
T
2
J
, JUNCTION TEMPERATURE (°C)
0.6
75
3
Q
T
0.7
100
4
Q
2
0.8
5
125
0.9
I
T
D
J
= 30 A
= 25°C
6
V
I
D
150
GS
1.0
= 11 A
7
16
14
12
10
8
6
4
2
0
175
1.1

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