NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 10

• Manufacturer Part Number: NTMSD6N303R2SG
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

• Applicable in battery packs which require a high current level.
• During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
• During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
• Under normal operation, both transistors are on.
Li−Ion
BATTERY
CELLS
Li−Ion BATTERY PACK APPLICATIONS
TYPICAL APPLICATIONS
SCHOTTKY
DISCHARGE
Q1
http://onsemi.com
Battery Pack
SMART IC
10
SCHOTTKY
CHARGE
Q2
PACK +
PACK −