NTMSD6N303R2SG ON Semiconductor, NTMSD6N303R2SG Datasheet - Page 4

• Manufacturer Part Number: NTMSD6N303R2SG
• Description: MOSFET N-CH 30V 6A 8-SOIC
• Manufacturer: ON Semiconductor
• Series: FETKY™r

Specifications of NTMSD6N303R2SG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.045
0.035
0.025
0.015
12
10
0.03
0.02
0.01
0.05
0.04
8
6
4
2
0
1.6
1.4
1.2
0.8
0.6
1.8
0
1
−50
4 V
6 V
10 V
1
Figure 3. On−Resistance versus Drain Current
0.2
V
V
GS
DS
Figure 1. On−Region Characteristics
2
−25
I
V
Figure 5. On−Resistance Variation with
D
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 10
0.4
= 3 A
3
= 10 V
T
J
, JUNCTION TEMPERATURE (°C)
3.8 V
0.6
I
0
D
3.6 V
4
, DRAIN CURRENT (AMPS)
3.4 V
and Temperature
0.8
5
25
Temperature
T = −55°C
T = 125°C
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
T = 25°C
6
1
50
1.2
7
75
8
1.4
V
T
100
9
GS
1.6
J
= 25°C
= 2.6 V
10
2.8 V
3.2 V
3 V
1.8
125
http://onsemi.com
11
2
150
12
4
10,000
0.035
0.025
0.015
0.045
1000
0.05
0.04
0.03
0.02
0.01
100
10
12
10
8
6
4
2
0
0
0
1
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
DS
J
V
2
= 25°C
V
V
GS
≥ 10 V
DS
GS
Figure 2. Transfer Characteristics
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
1
I
D
4
, DRAIN CURRENT (AMPS)
T
T
J
10
J
and Gate Voltage
= 125°C
= 25°C
versus Voltage
5
T
T
J
J
2
V
V
= 150°C
= 125°C
GS
GS
6
15
= 4.5 V
= 10 V
7
T
J
3
= −55°C
8
20
9
4
10
25
11
30
12
5